@Article{CL.2023.201.19,
AUTHOR = {A. B. Alwany, G. M. Youssef, M. A. Algradee, M. A. Abdel-Rahim, A. Alnakhlani, B. Hassan},
TITLE = {Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn<sub>50</sub>Se<sub>50</sub> thin films},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {1},
PAGES = {19--31},
URL = {http://www.techscience.com/CL/v20n1/65342},
ISSN = {1584-8663},
ABSTRACT = {Thin films of Zn<sub>50</sub>Se<sub>50</sub> were prepared by the vacuum evaporation technique on glass 
substrates. The influence of annealing temperature (T<sub>ann</sub>.) on the structural and optical 
properties of ZnSe polycrystalline films was investigated using X-ray diffraction (XRD), 
scanning electron microscopy (SEM) and optical transmittance T (λ). The crystalline 
phases that were found in the Zn<sub>50</sub>Se<sub>50</sub> thin films are ZnSe, Se and Zn. The refractive index 
(n) and the thickness of the films (d) were calculated using Swanepoel’s method for the 
films annealed at (423 K). The mechanism of optical absorption follows the rule of direct 
transition. The values of band gap (E<sub>G</sub>) were found to decrease from about 2.933 to 2.635 
eV with the increasin of the T<sub>ann</sub>. from 300 to 423 K. Urbach energy (E<sub>U</sub>) was calculated 
and found to the increase by increasing T<sub>ann</sub>. The dispersion of the n was discussed in 
terms of the single-oscillator Wemple and DiDomenico model. The Arrhenius formula 
was used to discuss the electrical conductivity (σ<sub>DC</sub>), activation energy (ΔE) and preexponential
factor (σ<sub>o</sub>). },
DOI = {10.15251/CL.2023.201.19}
}