TY - EJOU
AU - Alwany, A. B.
AU - Youssef, G. M.
AU - Algradee, M. A.
AU - Abdel-Rahim, M. A.
AU - Alnakhlani, A.
AU - Hassan, B.
TI - Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films
T2 - Chalcogenide Letters
PY - 2023
VL - 20
IS - 1
SN - 1584-8663
AB - Thin films of Zn50Se50 were prepared by the vacuum evaporation technique on glass
substrates. The influence of annealing temperature (Tann.) on the structural and optical
properties of ZnSe polycrystalline films was investigated using X-ray diffraction (XRD),
scanning electron microscopy (SEM) and optical transmittance T (λ). The crystalline
phases that were found in the Zn50Se50 thin films are ZnSe, Se and Zn. The refractive index
(n) and the thickness of the films (d) were calculated using Swanepoel’s method for the
films annealed at (423 K). The mechanism of optical absorption follows the rule of direct
transition. The values of band gap (EG) were found to decrease from about 2.933 to 2.635
eV with the increasin of the Tann. from 300 to 423 K. Urbach energy (EU) was calculated
and found to the increase by increasing Tann. The dispersion of the n was discussed in
terms of the single-oscillator Wemple and DiDomenico model. The Arrhenius formula
was used to discuss the electrical conductivity (σDC), activation energy (ΔE) and preexponential
factor (σo).
KW - Chalcogenide glasses
KW - thin films
KW - annealing temperature
KW - Swanepoel’s method
KW - optical and electrical properties
DO - 10.15251/CL.2023.201.19