@Article{CL.2023.2010.725,
AUTHOR = {O. V. Iaseniuc, M. S. Iovu},
TITLE = {Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {10},
PAGES = {725--731},
URL = {http://www.techscience.com/CL/v20n10/65135},
ISSN = {1584-8663},
ABSTRACT = {In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te sys
tem have been investigated by a photoelectric method. The spectral distribution of steady
state photocurrent <i>I<sub>ph</sub>=(λ) </i>and the relaxation curves of photocurrent<i> I<sub>ph</sub>=(t)</i> were registered 
at positive and negative polarity of the applied voltage to the top Al illuminated electrode. 
In the spectral distribution of steady-state photocurrent, for the amorphous thin films 
As<sub>1.17</sub>S<sub>2.7</sub>Sb<sub>0.83</sub>Te<sub>0.40</sub>, As<sub>1.04</sub>S<sub>2.4</sub>Sb<sub>0.96</sub>Te<sub>0.60</sub>, As<sub>0.63</sub>S<sub>2.7</sub>Sb<sub>1.37</sub>Te<sub>0.30</sub>, and As<sub>0.56</sub>S<sub>2.4</sub>Sb<sub>1.44</sub>Te<sub>0.60</sub> in 
the wavelength range <i>λ</i>=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, 
which are the result of the presence of binary clusters As<sub>2</sub>S<sub>3</sub>, Sb<sub>2</sub>S<sub>3</sub> and Sb<sub>2</sub>S<sub>3</sub>. The photo
voltaic method was used to obtain the value of the band gap width, which was about<i> Eg </i>
=1.41 eV. },
DOI = {10.15251/CL.2023.2010.725}
}