@Article{CL.2023.2011.789,
AUTHOR = {K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma},
TITLE = {The role of Cu doping in properties of CdZnS thin films},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {11},
PAGES = {789--796},
URL = {http://www.techscience.com/CL/v20n11/65101},
ISSN = {1584-8663},
ABSTRACT = {CdZnS thin films created via chemical bath deposition were examined to see how Cu 
doping affected their characteristics. Cu ions were added to the films in order to change 
their optical, structural, and morphological characteristics. These findings suggest that Cu 
doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray
 diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we 
were able to investigate the compositional ratio as well as the structural features of the 
films. The field emission scanning electron microscopy (FESEM) technique was utilized 
in order to investigate the surface morphology of the produced films. The morphology of 
prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy 
technique was utilized in order to characterize the optical properties of thin films. The 
prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect 
gap equal to 2.4 eV. },
DOI = {10.15251/CL.2023.2011.789}
}