
@Article{CL.2023.2011.837,
AUTHOR = {T. A. Chowdhury, S. M. T. Hossain, M. K. Anna, S. A. Ritu, S. F. Nuri},
TITLE = {Numerical optimization of tin sulphide based solar cell for different buffer layers using SCAPS},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {11},
PAGES = {837--845},
URL = {http://www.techscience.com/CL/v20n11/65107},
ISSN = {1584-8663},
ABSTRACT = {Researchers are doing intense research in tin sulfide (SnS)-based solar cells because of 
their outstanding semiconducting features. In this work, the solar cell capacitance 
simulator (SCAPS-1D) has been used to do the simulation study of thin films solar cells 
using SnS absorber layer with different buffer layers (ZnO, ZnSe, CdZnS, TiO<sub>2</sub>) in 
comparison to the toxic CdS buffer layer. Photovoltaic parameters (open circuit voltage, 
fill factor, short-circuit current density and efficiency) is evaluated as a function of 
absorber layer thickness, different buffer layer and buffer layer thickness. Device stability 
at different operating temperature is also evaluated. The simulation results reveal the 
fabrication of high efficiency SnS based solar cells. },
DOI = {10.15251/CL.2023.2011.837}
}



