@Article{CL.2023.202.145,
AUTHOR = {H. K. Hassun, B. K. H. Al-Maiyaly, A. H. Shaban},
TITLE = {Fabrication and evaluation of CuAlSe<sub>2</sub>/Si photodetector},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {2},
PAGES = {145--152},
URL = {http://www.techscience.com/CL/v20n2/65337},
ISSN = {1584-8663},
ABSTRACT = {In this work, we have examined the spectral response of (p-CuAlSe<sub>2</sub>/n-Si) detector, (CAS) 
thin films deposited by thermal evaporation at RT with a thickness (450) nm, and 
annealing temperature at (473K) for 2 h. Optical transmission measurements displayed 
reasonably slight transmission besides higher absorbance trendy the visible region, energy 
gaps were observed by annealing, were found to be direct, and decreased with the effect of 
annealing. The extreme responsivity value arises at wavelength 459 nm, with improvement 
value of specific detectivity and quantum efficiency the annealing films be situated 
originate as greatest suitable aimed at numerous device application. },
DOI = {10.15251/CL.2023.202.145}
}