@Article{CL.2023.203.177,
AUTHOR = {A. F. Qasrawi, Hazem K. Khanfar},
TITLE = {Voltage and frequency controlled Ge/SeO<sub>2</sub> thin film transistors designed as rectifiers, negative capacitance and negative conductance sources},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {3},
PAGES = {177--186},
URL = {http://www.techscience.com/CL/v20n3/65301},
ISSN = {1584-8663},
ABSTRACT = {Herein voltage and frequency controlled thin film transistors fabricated by depositing 
SeO<sub>2</sub> onto germanium thin crystals are reported. For these devices measurements of the 
current-voltage characteristics revealed a biasing dependent rectification ratios. The 
devices showed metal-oxide-semiconductor character under reverse biasing conditions. In 
addition, the biasing dependent capacitance and conductance spectral studies in the 
frequency domain of 20M-1000MHz has shown the possibility of switching the 
capacitance and negative conductance from negative mode to positive mode. The features 
of the Ge/SeO<sub>2</sub> devices make them attractive for use in electronic circuits as parasitic 
capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.},
DOI = {10.15251/CL.2023.203.177}
}