@Article{CL.2023.203.197,
AUTHOR = {Hiba M. Ali, I. Khudayer},
TITLE = {Preparation and analysis of Ag<sub>2</sub>Se<sub>1-x</sub>Te<sub>x</sub> thin film structure on the physical properties at various temperatures by thermal evaporation},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {3},
PAGES = {197--203},
URL = {http://www.techscience.com/CL/v20n3/65303},
ISSN = {1584-8663},
ABSTRACT = {Silver selenide telluride Semiconducting (Ag<sub>2</sub>Se<sub>0.8</sub>Te<sub>0.2</sub>) thin films were by thermal 
evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and 
448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural 
characteristics were calculated as a function of annealing temperatures with no preferential 
orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are 
used to analyze the Ag<sub>2</sub>SeTe thin films' physical makeup and properties. AFM techniques 
were used to analyze the surface morphology of the Ag<sub>2</sub>SeTe films, and the results showed 
that the values for average diameter, surface roughness, and grain size mutation increased 
with annealing temperature (116.36-171.02) nm The transmittance and absorbance spectra 
are also analyzed and published in accordance with the wavelength range of (400-1100) 
nm, The results show that the sample's maximum absorbance value was obtained at a 
temperature treatment of 448 K, The findings show that the thin films under study are 
particular of direct transitions at optical energies of 2.05& 1.7& 1.65 and 1.6 ev. },
DOI = {10.15251/CL.2023.203.197}
}