@Article{CL.2023.203.227,
AUTHOR = {H. Moughli, B. Azeddine, Z. Tiouti, M. Rajczyk},
TITLE = {Study and modeling of a CdS /PbS betavoltaic cell by Monte Carlo simulation},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {3},
PAGES = {227--233},
URL = {http://www.techscience.com/CL/v20n3/65330},
ISSN = {1584-8663},
ABSTRACT = {In this paper, we present simulations of the concentration of electron-hole pairs generated 
from each point in solid targets under Ni-63 source bombardment of a CdS/PbS-based 
betavoltaic cell. This model is an accurate representation of the electronic interaction has 
been reported. We can obtain the distribution of the electron-hole pairs generated in the 
CdS/PbS junction as a function of the depth by Monte Carlo simulation, this distribution 
allowed us to find the concentrations of excess minority carriers as a function of the 
thickness, which can be function and injection into the continuity equations to determine 
the diffusion current and then the selected petavoltage properties. The model was tested 
for the Ni-63 CdS/PbS structure, with energy of 17 keV.},
DOI = {10.15251/CL.2023.203.227}
}