@Article{CL.2023.204.243,
AUTHOR = {A. Talhi, B. Azeddine, Z. Tiouti, M. Rajczyk},
TITLE = {Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {4},
PAGES = {243--249},
URL = {http://www.techscience.com/CL/v20n4/65292},
ISSN = {1584-8663},
ABSTRACT = {The method for producing power by integrating a beta source to semiconductors junction’s 
devices is called as betavoltaic energy conversion. [1]. In this study by using Monte Carlo 
(MC) method to simulate the distribution of electron- hole pairs (EHP) generated at each 
point in the cell under bombardment of 
<sup>63</sup>
Ni source for betavoltaic cell then the result of 
that Monte Carlo simulation will be used in the modelling and simulation of a betavoltaic 
cell CdS/CdTe heterojunction and their characteristics.},
DOI = {10.15251/CL.2023.204.243}
}