@Article{CL.2023.204.285,
AUTHOR = {A. F. Gochuyeva, Kh. Kh. Hashimov, I. Y. Bayramov},
TITLE = {Photoelectret effect in polymer-A<sup>II</sup> B<sup>VI</sup> (CdS, ZnS) composites of photosensitive semiconductors},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {4},
PAGES = {285--291},
URL = {http://www.techscience.com/CL/v20n4/65296},
ISSN = {1584-8663},
ABSTRACT = {The photoelectret effect in composite heterostructures consisting of polar (fluorinecontaining)
 and non-polar (polyolefins) polymers - high density polyethylene (HDPE), 
low density polyethylene (LDPE), F42, F2-ME and the inorganic phase A<sup>II</sup> B<sup>VI</sup>
 (CdS, ZnS) 
has been studied. It has been established that the difference in photoelectret potentials in a 
given volume share of the inorganic phase mainly depends on the polarity of the polymer 
matrix. A possible mechanism of the photoelectret effect formed under the combined 
action of a strong electric field and light in these composites. It has been experimentally 
established that the potential barrier formed at the polymer- A<sup>II</sup> B<sup>VI</sup> semiconductor interface 
separates the electric charge carriers formed as a result of the internal photoelectric effect 
and ensures the formation of an electret potential difference. The electret charge state of 
polymer-A<sup>II</sup> B<sup>VI</sup> composites was studied using the spectrum of thermally stimulated 
current. },
DOI = {10.15251/CL.2023.204.285}
}