@Article{CL.2023.205.333,
AUTHOR = {H. A. Mohamed, Sh. S. Ali, M. R. Ahmed, W. S. Mohamed},
TITLE = {Analytical model for studying the role of ZnS-doped CdS on the performance of CZTSSe solar cells},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {5},
PAGES = {333--342},
URL = {http://www.techscience.com/CL/v20n5/65285},
ISSN = {1584-8663},
ABSTRACT = {This study focuses on thin-film structures made of ITO, CdS, ZnS, CZTSSe, and Mo (i.e., 
ITO/CdS:ZnS/CZTSSe/Mo) for solar cell applications. The effect of ZnS content on the 
performance of this cell has been theoretically investigated. The optical losses caused by 
reflection at various interfaces and absorption in ITO and CdS:ZnS layers have been 
calculated using the current structure's experimental data. The losses due to charge carrier 
recombination at the front and back surfaces of the CZTSSe absorber have been calculated 
using the absorber layer and depletion region parameters. It was discovered that increasing 
the ZnS content causes more photons to enter the absorber layer, causing the short-circuit 
current density to increase. Under consideration of optical and recombination losses, a 
maximum efficiency of about 13.75%, a fill factor of 81.6%, and an open-circuit voltage 
of 808 mV were obtained for ZnS-content = 0.5. },
DOI = {10.15251/CL.2023.205.333}
}