TY  - EJOU
AU  - Mohammed, J. S. 
AU  - Nsaif, F. K. 
AU  - Jawad, Y. M. 
AU  - Jasim, K. A. 
AU  - Dulaimi, A. H. Al 

TI  - Investigating the optical and electrical characteristics of As<sub>60</sub>Cu<sub>40-x</sub>Se<sub>x</sub> thin films  prepared using pulsed laser deposition method
T2  - Chalcogenide Letters

PY  - 2023
VL  - 20
IS  - 7
SN  - 1584-8663

AB  - In this work, As<sub>60</sub>Cu<sub>40-x</sub>Se<sub>x</sub> thin films were synthesized, and the pulsed laser deposition 
method was used to study the effected partial replacement of copper with selenium. The 
electrical characteristics and optical characteristics, as indicated by the absorbance and 
transmittance as a function of wavelength were calculated. Additionally, the energy gap was 
computed. The electrical conductivity of the DC in the various conduction zones was 
calculated by measuring the current and voltage as a function of temperature. Additionally, 
the mathematical equations are used to compute the energy constants, electron hopping 
distance, tail width, pre-exponential factor, and density of the energy states in variation 
zones (densities of the energetic extended states N<sub>(Eext)</sub>, localize N<sub>(Eloc)</sub> and at the Fermi states 
N<sub>(Ef)</sub>). The acquired data also demonstrated that the selenium concentration obviously had 
an impact on the electrical conduction mechanics, energy states, and the level of 
randomization.
KW  - Pulsed laser deposition
KW  -  Thin film
KW  -  partial replacement
KW  -  Optical and electrical properties

DO  - 10.15251/CL.2023.207.449