@Article{CL.2023.207.487,
AUTHOR = {S. Sultanbekov, O. Prikhodko, N. Almas},
TITLE = {Structure and electronic properties of thin Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films produced by DC ion-plasma spattering},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {7},
PAGES = {487--496},
URL = {http://www.techscience.com/CL/v20n7/65257},
ISSN = {1584-8663},
ABSTRACT = {The optical properties of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films were studied as a function of thickness. An 
increase in optical band gap with decreasing film thickness has been observed. The current–
voltage characteristics measured in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films in the current mode are studied. 
A decrease in switching time and threshold voltage with decreasing film thickness is 
established.},
DOI = {10.15251/CL.2023.207.487}
}