TY  - EJOU
AU  - Sultanbekov, S. 
AU  - Prikhodko, O. 
AU  - Almas, N. 

TI  - Structure and electronic properties of thin Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films produced by DC ion-plasma spattering
T2  - Chalcogenide Letters

PY  - 2023
VL  - 20
IS  - 7
SN  - 1584-8663

AB  - The optical properties of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films were studied as a function of thickness. An 
increase in optical band gap with decreasing film thickness has been observed. The current–
voltage characteristics measured in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films in the current mode are studied. 
A decrease in switching time and threshold voltage with decreasing film thickness is 
established.
KW  - Chalcogenide glassy semiconductors
KW  -  Switching effect
KW  -  PC-RAM
KW  -  Atomic structure
KW  -  Electronic properties

DO  - 10.15251/CL.2023.207.487