@Article{CL.2023.208.573,
AUTHOR = {R. Singh, S. Kimothi, M. V. Singh, U. Rani, A. S. Verma},
TITLE = {Structural and device fabrication of 2D-MoS<sub>2</sub> thin film},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {8},
PAGES = {573--578},
URL = {http://www.techscience.com/CL/v20n8/65246},
ISSN = {1584-8663},
ABSTRACT = {In this research paper, we have prepared thin film of MoS<sub>2</sub> by thermal evaporation 
technique and characterized it. This thin film depositions lead to amorphous thin film. To 
make it crystalline, thermal annealing of the film have deposited on the substrates at 800 ℃ for two hour under vacuum environment. X-ray diffraction data of thin film shows the 
poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film 
shows the crystallinity with regularly arranged grains. Furthermore, an unconventional 
MoS<sub>2</sub> based FET device has been fabricated by depositing thin film of MoS<sub>2</sub> on p-type 
silicon. Thereafter, its transfer and output characteristics have been studied. The results 
show n-type semiconductor behaviour with an on/off ratio of about 10<sup>3</sup>
 and field-effect 
mobility of ~0.015 cm<sub>2</sub>/V. s at V<sub>DS</sub> of 1 V. },
DOI = {10.15251/CL.2023.208.573}
}