@Article{CL.2023.209.629,
AUTHOR = {N. S. Khairuddin, M. Z. Mohd Yusoff, H. Hussin},
TITLE = {The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {9},
PAGES = {629--637},
URL = {http://www.techscience.com/CL/v20n9/65240},
ISSN = {1584-8663},
ABSTRACT = {In this study, we used the PC1D simulator to demonstrate the performance analysis of a 
solar cell model based on gallium nitride (GaN). It has been discovered that when the layer 
thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was 
found by comparing the doping concentration and layer thickness on the GaN and silicon 
substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just 
modestly. The optimal doping concentrations for GaN and p-silicon are 1x10<sup>18</sup>
 cm<sup>-3</sup>
 and 
1x10<sup>17</sup>
 cm<sup>-3</sup>
, respectively. In compared to other designs, GaN/p-silicon solar cells have the 
highest efficiency of 25.26%. },
DOI = {10.15251/CL.2023.209.629}
}