@Article{CL.2023.209.649,
AUTHOR = {J. H. Azzawi, B. A. Ahmed, K. A. Jasim, E. M. T. Salman},
TITLE = {Calculation of the localized and extended energy states density for Ge<sub>60</sub>Se<sub>40-x</sub>Te<sub>x</sub> alloy prepared by melting point method},
JOURNAL = {Chalcogenide Letters},
VOLUME = {20},
YEAR = {2023},
NUMBER = {9},
PAGES = {649--656},
URL = {http://www.techscience.com/CL/v20n9/65242},
ISSN = {1584-8663},
ABSTRACT = {The DC electrical conductivity properties of Ge<sub>60</sub>Se<sub>40-x</sub>Te<sub>x</sub> alloy with x = 0, 5, 10, 15 and 
20). The samples were formed in the form of discs with the thickness of 0.25–0.30 cm and 
the diameter of 1.5 cm. Samples were pressed under a pressure of 6 tons per cm<sup>2</sup>
, using a 
ton hydraulic press. They were prepared after being pressed using a ton hydraulic press 
using a hydraulic press. Melting point technology use to preper the samples. Continuous 
electrical conductivity properties were recorded from room temperature to 475 K. 
Experimental data indicates that glass containing 15% Te has the highest electrical 
conductivity allowing maximum current through the sample compared to Lu with other 
samples. Therefore, it is found that the DC conductivity increases with increasing Te 
concentration. The electrical conductivity properties show non-ohmic behavior due to the 
effects of temperature on the crystal structure of the samples, which indicates that the 
samples remain semi-conductive after partial replacement. Three conduction mechanisms 
are also observed for each sample at high, medium, and low temperatures. The Fermi level 
local and extended state densities and conductance parameters were calculated, and all 
were found to change with the change of Te concentration. },
DOI = {10.15251/CL.2023.209.649}
}