@Article{CL.2024.211.11,
AUTHOR = {S. A. Kamil, G. Jose},
TITLE = {Er<sup>3+</sup>-doped SiO<sub>2</sub>-TeO<sub>2</sub>-ZnO-Na<sub>2</sub>O thin film fabricated by ultrafast laser plasma doping under different ambient atmospheres},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {1},
PAGES = {11--20},
URL = {http://www.techscience.com/CL/v21n1/65069},
ISSN = {1584-8663},
ABSTRACT = {Er<sup>3+</sup>-ions doped SiO<sub>2</sub>-ZnO-Na<sub>2</sub>O thin films were fabricated using ultrafast laser plasma 
doping (ULPD) techniques under different ambient atmospheres; vacuum, nitrogen, oxygen 
and argon gas. The thickness of the layer produced depends on the ambient atmosphere 
during fabrication. The layer fabricated under a vacuum is the thinnest among all of the 
samples. In addition, the surface layer for the sample fabricated under a vacuum 
environment seems to be relatively smoother compared with those of the others. XRD 
patterns show that all samples are in a mixed amorphous-crystalline phase. All the Raman 
spectra exhibited a similar pattern, except for the intensity of the Si peak which depended 
on the thickness of the obtained layer. The PL intensity for each sample corresponds to the 
amount of Er
<sup>3+</sup> 
ions embedded in the doped layer. However, all samples still exhibited 
silicate-based characteristics, indicating nitrogen in Si<sub>3</sub>N<sub>4</sub> was lost in the form of nitrogen 
gas during fabrication. },
DOI = {10.15251/CL.2024.211.11}
}