@Article{CL.2024.211.65,
AUTHOR = {K. I. Hussain, A. Ashour, E. S. Yousef, E. R. Shaaban},
TITLE = {Thermal stability and crystallization kinetic of Se-Te-Ag glassy alloys and thick films for electronic devices},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {1},
PAGES = {65--80},
URL = {http://www.techscience.com/CL/v21n1/65073},
ISSN = {1584-8663},
ABSTRACT = {The present work has examined the thermal features of glassy chacogenide materials 
Se0.75-xTe0.25Agx (x = 0, 2, 4, 6, 8, 10 at %). The thermal stability of these compositions 
has been assessed under non-isothermal conditions using Differential Scanning 
Calorimetry (DSC), which has been used to find the glass transition temperature (Tg), the 
initial crystallization temperature (Tin), the temperature corresponding to the top of the 
crystallization rate (Tp), and the melting temperature (Tm). In addition, the kinetic 
parameter Kr(T) was given as an additional sign of thermal stability. Among these 
compositions, it was discovered that Se0.71Te0.25Ag0.04 had the best glass-forming 
ability and glass-thermal stability. The average coordination numbers of the considered 
samples have been discussed in relation to these results. Additionally, we measured the 
sheet resistivity, ρ, whose thickness is equivalent to 1000 nm at heating rate 5 K/min, in 
this work to study the crystallization kinetics of thick films of Se0.75-xTe0.25Agx (x = 0, 
2, 4, 6, 8, 10 at %) in the temperature range of 300 to 625 K. This range was sufficient to 
draw attention to two substantial areas in the resistivity versus temperature curve, and the 
derivation of resistivity as a function of temperature established that the films under study 
only had one crystallization region. },
DOI = {10.15251/CL.2024.211.65}
}