TY  - EJOU
AU  - Ahmed, A. A. 
AU  - Ali, G. G. 
AU  - Daham, N. A. 

TI  - Performance of high sensitive heterojunction CuS/porous silicon photodetector
T2  - Chalcogenide Letters

PY  - 2024
VL  - 21
IS  - 1
SN  - 1584-8663

AB  - In this work, copper sulfide (CuS) nanostructure was deposited on a porous silicon wafer 
for the visible light by spray pyrolysis method. Through this, a series of devices were 
suggested as a part of the deposit concentration of CuS on n-type porous silicon. 
Simultaneously, the physical features of the attained film were illustrated. FESEM 
exhibited that the average nanoparticle diameter increased with the concentration of CuS 
at orientation (100) and was found to be 47.84 nm, 56.36nm and 71.32nm, while the 
average diameter at (111) orientation was found to be 37.64 nm, 41.46nm, 55.22 nm of 
0.1, 0.3 and 0.5M respectively. In addition to the atomic force microscope (AFM) showed 
the roughness and uniformity of the CuS/PSi fabricated decreased with increasing 
concentration of CuS, In detail, the attained photo-responsivity and specific detectivity 
were observed to be 210 mW/A, 340 mW/A and 3×10<sup>10</sup>
 Jones, 4.2×10<sup>10</sup>
 Jones at 
orientation (100 )using concentration of 0.1M and 0.5M respectively . On the other hand, 
the photo-responsivity and specific detectivity were observed to be 260 mW/A, 380 
mW/A and 1.8 ×10<sup>10</sup> 
Jones, 4.5×10<sup>10</sup>
 Jones at orientation (111) using concentrations of 
0.1M and 0.5M respectively. The presented work shows a substitutional system for an 
economical and environmentally friendly optoelectronic scheme. The photo-responsive 
considered to be in a positive linear relationship with the used concentration. 
KW  - CuS
KW  -  Porous silicon
KW  -  SEM
KW  -  XRD
KW  -  Photodetector

DO  - 10.15251/CL.2024.211.81