@Article{CL.2024.2110.797,
AUTHOR = {G. M. Liu, G. Hu, P. Tang, L. L. Wu, X. Hao, G. G. Zeng, W. W. Wang, J. Q. Zhang},
TITLE = {Study of the effect of CdCl<sub>2</sub> introduction on the high temperature activation treatment of CdTe:As polycrystalline thin films},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {10},
PAGES = {797--808},
URL = {http://www.techscience.com/CL/v21n10/64927},
ISSN = {1584-8663},
ABSTRACT = {V-doped CdTe polycrystalline films can achieve both doping activation and defect 
passivation by high-temperature CdCl<sub>2</sub> heat treatment, but this requires simultaneous 
modulation of the amount of CdCl<sub>2</sub> introduced to obtain high-quality films. It is found that 
increasing the CdCl<sub>2</sub> introduction does not change the physical phase structure and lattice 
constant of CdTe:As thin films, but promotes grain recrystallisation, and can promote the 
formation of A-center, and inhibit the formation of Cd vacancy (VCd) defects, as well as the 
formation of deep energy level defects. The results provide guidance for the improvement 
of high-temperature CdCl<sub>2</sub> heat treatment of V-doped CdTe polycrystalline thin films. },
DOI = {10.15251/CL.2024.2110.797}
}