@Article{CL.2024.2111.855,
AUTHOR = {H. R. Hassan, A. N. Abd, M. J. M. Ali},
TITLE = {Improvement of porous silicon by adding CIGS NPs prepared by laser ablation method in water},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {11},
PAGES = {855--866},
URL = {http://www.techscience.com/CL/v21n11/64914},
ISSN = {1584-8663},
ABSTRACT = {Using a laser energy of no more than 600 mJ/pulse and a maximum of 500 pulses, this 
work selectively produced pure copper, indium, gallium, and selenide (CIGS) NPs using a 
laser ablation method with distilled water and n-type porous silicon prepared by the 
photoelectron etching method. The material exhibits quantum dot behavior, according to 
experimental investigations. Porous silicone bases were produced using a current density 
of 10 mA/cm2
 and an etching time of 15 min. Tests XRD, SEM, AFM, FTIR, UV, PL 
were conducted for the porous silicone and CIGS NPs to ensure that each of them is 
produced efficiently. To produce a hybrid junction\CIGS\Psi\n-Si\AG we see an 
enhancement of the spectral response of 0.71 A/W when a quantum dot is deposited on 
porous silicon. },
DOI = {10.15251/CL.2024.2111.855}
}