@Article{CL.2024.2111.867,
AUTHOR = {M. Temiz, S. Çelik},
TITLE = {Influence of growth temperature on the structural and optical characteristics of PbZnS thin films},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {11},
PAGES = {867--872},
URL = {http://www.techscience.com/CL/v21n11/64915},
ISSN = {1584-8663},
ABSTRACT = {Ternary thin films have garnered significant attention due to their adjustable band gap 
characteristics, making them suitable for many applications. In this research, we examined 
the structural and optical characteristics of PbZnS thin films fabricated onto glass substrates 
employing the spray pyrolysis techniuqe. The films were fabricated at different temperatures 
ranging from 300 to 400°C. X-ray diffraction (XRD) analysis indicated that all films 
displayed a cubic structure with a preferred orientation along the (200) plane. From the 
analysis of XRD peaks, it was observed that the crystal structure initially improved with 
increasing temperature but then began to degrade. These films demonstrated strong 
absorption in the range of 350–1600 nm. The optical bandgap (Eg) values, calculated based 
on the relationship between the absorption coefficient and photon energy, showed slight 
variations around 2 eV. Notably, the band gap decreased with growth temperatures up to 
350°C, then increased at higher temperatures. These fluctuations are attributed to factors 
such as thermal expansion, strain, defects, surface/interface effects, and changes in doping 
or composition.},
DOI = {10.15251/CL.2024.2111.867}
}