@Article{CL.2024.214.305,
AUTHOR = {A. Benmir, M. L. Louazene},
TITLE = {Effect of defect density, bandgap profile, material composition, thickness, and  doping density of the absorber layer on the performance of thin film solar  cell based on antimony selenosulfide Sb<sub>2</sub>(Se<sub>1-y</sub>S<sub>y</sub>)<sub>3</sub>},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {4},
PAGES = {305--317},
URL = {http://www.techscience.com/CL/v21n4/65041},
ISSN = {1584-8663},
ABSTRACT = {This article deals with the optimization by simulation of a graded bandgap thin film solar 
cell based on antimony selenosulfide Sb<sub>2</sub>(Se<sub>1-y</sub>S<sub>y</sub>)<sub>3</sub> having the following structure: Front 
contact/n-ZnO/i-ZnO/p-SbSSe/n-CdS/Back contact. The simulation is performed using 
SCAPS-1D software. The optimization process includes optimizing the bulk defect 
density, bandgap profile, material composition, thickness, and doping density of the 
absorber layer of thin film solar cell based on antimony selenosulfide Sb<sub>2</sub>(Se<sub>1-y</sub>S<sub>y</sub>)<sub>3</sub>. We 
found that for a bulk defect density below 10<sup>13</sup>
 cm<sup>-3</sup>
, using an absorber material with a 
graded bandgap profile leads to an efficiency of 25.33 % (For a bulk defect density of 
10<sup>10</sup>
 cm<sup>-3</sup>
) higher than that with a uniform bandgap profile. However, for a bulk defect 
density of 10<sup>13</sup>
 cm<sup>-3</sup>
, both profiles provide almost the same maximum solar cell conversion 
efficiencies of about 13.6 %. Ultimately, for a bulk defect density above 10<sup>13</sup>
 cm<sup>-3</sup>
, the 
graded bandgap profile is not useful, and a maximum solar cell conversion efficiency of 
10.5 % (For a bulk defect density of 10<sup>14</sup>
 cm<sup>-3</sup>
) is achieved with a uniform bandgap profile. 
These optimization results help to improve the efficiency of low-cost fabricated thin-film 
solar cells. },
DOI = {10.15251/CL.2024.214.305}
}