@Article{CL.2024.214.343,
AUTHOR = {F. B. ohammed Ameen, M. H. Younus, G. G. Ali},
TITLE = {Properties investigation of ZnS/porous silicon heterojunction for gas sensing},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {4},
PAGES = {343--354},
URL = {http://www.techscience.com/CL/v21n4/65045},
ISSN = {1584-8663},
ABSTRACT = {In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been 
investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully 
synthesized over the Porous silicon substrate by the spray pyrolysis method. The 
properties of the as-prepared samples were characterized X-ray diffraction (XRD), 
scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical 
properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures 
enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous 
silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at ZnS 
concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The 
ZnS-PSi heterojunction based gas sensor may be used for UV-light photo-detectors due to 
a valuable properties such as high sensitivity and fast response. },
DOI = {10.15251/CL.2024.214.343}
}