TY  - EJOU
AU  - Ameen, F. B. ohammed 
AU  - Younus, M. H. 
AU  - Ali, G. G. 

TI  - Properties investigation of ZnS/porous silicon heterojunction for gas sensing
T2  - Chalcogenide Letters

PY  - 2024
VL  - 21
IS  - 4
SN  - 1584-8663

AB  - In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been 
investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully 
synthesized over the Porous silicon substrate by the spray pyrolysis method. The 
properties of the as-prepared samples were characterized X-ray diffraction (XRD), 
scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical 
properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures 
enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous 
silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at ZnS 
concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The 
ZnS-PSi heterojunction based gas sensor may be used for UV-light photo-detectors due to 
a valuable properties such as high sensitivity and fast response. 
KW  - ZnS
KW  -  Porous silicon
KW  -  SEM
KW  -  XRD
KW  -  Gas sensor

DO  - 10.15251/CL.2024.214.343