TY  - EJOU
AU  - Soud, A. J. 
AU  - Al-Maiyaly, Bushra K. H. 

TI  - Influence of annealing temperature on nano crystalline description  for CuZnS thin films
T2  - Chalcogenide Letters

PY  - 2024
VL  - 21
IS  - 5
SN  - 1584-8663

AB  - Copper Zinc Sulphide (Cu<sub>0.5</sub>Zn<sub>0.5</sub>S) alloy and thin films were fabricated in a vacuum. 
Nano crystallized (CZS) film with thick 450±20 nm was deposit at substrates glasses 
using thermal evaporation technique below ~ 2 × 10<sup>−5</sup>
 mbar vacuum to investigated the 
films structural, morphological and optical properties depended on annealing temperatures 
( as-deposited, 423, 523 and 623) K for one hour. The influences annealed temperature on 
structurally besides morphologically characteristics on these films were investigated using 
XRD and AFM respectively. XRD confirms the formation a mixed hexagonal phase of 
CuS-ZnS in (102) direction with polycrystalline in nature having very fine crystallites size 
varying from (5.5-13.09) nm. AFM analysis shows the uniform distribution of closely 
packed grains, grain size for that film diverge on ranges as of (52.37 to 89.25) nm after 
annealed. The optical properties of all films prepared had been examined for the 
wavelength range 400 - 1000 nm using UV-Vis-NIR spectrometer. The band gaps of 
(Cu<sub>0.5</sub>Zn<sub>0.5</sub>S) films are obtained in the range of 2.4 to 1.9 eV, which makes it a suitable 
absorber as well as buffer/window layer for solar cell applications. 
KW  - Copper zinc sulphide
KW  -  AFM analysis
KW  -  Annealing
KW  -  Thermally evaporation

DO  - 10.15251/CL.2024.215.385