@Article{CL.2024.215.413,
AUTHOR = {N. A. Noor, F. Nasrullah, Ihab M. Moussa, S. Mumtaz},
TITLE = {Mechanical, magnetic, and electronic characteristics of Sm-based chalcogenides for spintronics and device applications},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {5},
PAGES = {413--421},
URL = {http://www.techscience.com/CL/v21n5/65036},
ISSN = {1584-8663},
ABSTRACT = { To comprehend the mechanical, electronic, and magnetic properties of chalcogenides 
HgSm<sub>2</sub>S/Se<sub>4</sub>, a DFT-oriented thorough investigation is carried out. The elastic constants 
and spin-dependent electrical characteristics are determined by using the PBEsol-GGA 
functional and (mBJ) potential correspondingly. Through optimization, a sufficient 
amount of energy is discharged by the FM state as compared to nonmagnetic states. By 
investigating Born stability criteria and formation energy, the structural stabilities of both 
spinels are verified. The calculated Poisson's and Pugh's ratios showed that both spinels 
are ductile. The estimation of Curie temperature has supported the existence of a 
ferromagnetic nature at room temperature. Moreover, the presence of ferromagnetism in 
both spinels is confirmed by spin-oriented electrical characteristics, owing to the coupling 
between component states associated with Sm and S/Se.},
DOI = {10.15251/CL.2024.215.413}
}