@Article{CL.2024.215.423,
AUTHOR = {P. Chaiworn, S. Kaewja, E. Wongrat, C. Wichasilp, A. Tubtimtae},
TITLE = {Structural, optical, and electrical analysis of tailoring Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3</sub> thin films},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {5},
PAGES = {423--429},
URL = {http://www.techscience.com/CL/v21n5/65037},
ISSN = {1584-8663},
ABSTRACT = {Bismuth antimony telluride (Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3</sub>) thin films were synthesized using chemical bath 
deposition (CBD) with various amounts of antimony. The structural, morphological, and 
optical properties of Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3</sub> thin films have been scrutinized using X-ray diffraction 
(XRD), field-emission scanning electron microscopy (FESEM), UV-Vis 
spectrophotometry. A higher amount of Sb contents can be observed the Sb<sub>0.405</sub>Te<sub>0.595</sub>, 
BiTe, and Bi<sub>4</sub>Te<sub>3</sub> phases consisted in the pattern. Meanwhile, the energy band gaps are 
tuned in the range of 2.95 to 3.30 eV. Finally, measurement of resistance with various 
temperatures for activation energy (E<sub>AC</sub>) estimation was performed. The highest E<sub>AC</sub> value 
was equal to 0.654 eV for 0.8 g SbCl<sub>3</sub> as a precursor of Sb atom incorporated in the Bi<sub>2</sub>Te<sub>3</sub> 
lattice. },
DOI = {10.15251/CL.2024.215.423}
}