@Article{CL.2024.217.493,
AUTHOR = {N. A. Ismayilova, S. G. Asadullayeva, E. K. Kasumova, Kh. A. Hidiyev, N. N. Hashimova, J. A. Guliyev},
TITLE = {Electronic, optical and elastic properties of AgCuS},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {7},
PAGES = {493--498},
URL = {http://www.techscience.com/CL/v21n7/64947},
ISSN = {1584-8663},
ABSTRACT = {DFT calculation is used to investigate the structural, electronic, optical, and elastic 
properties of AgCuSe and AgCuS. The calculations are performed using the ATK with 
generalized gradient approximation (GGA) in combination with Hubbard U correction 
parameters for both structures. The calculated band gap energies and partial density of 
state reveal that AgCuS has semiconductor properties unlike this AgCuSe has a metallic 
nature. The optical properties, real and imaginary parts of dielectric function are obtained 
for the energy range of 0 to 5 eV. Elastic stiffness coefficients (<i>Cij</i>), bulk modulus (<i>B</i>), 
shear modulus (<i>G</i>), and Young modulus (<i>E</i>) have been calculated. },
DOI = {10.15251/CL.2024.217.493}
}