@Article{CL.2024.217.543,
AUTHOR = {J. T. Jia, X. H. Yang, L. W. Wang},
TITLE = {Ultrasonic spray synthesis, photoelectric properties and photovoltaic performances of chalcogenide CaSnS<sub>3</sub>},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {7},
PAGES = {543--556},
URL = {http://www.techscience.com/CL/v21n7/64951},
ISSN = {1584-8663},
ABSTRACT = {Chalcogenide perovskites are promising lead-free, stable absorber materials for solar cells. 
This work reports the synthesis of orthorhombic phase pure CaSnS<sub>3</sub> thin films by facile 
low temperature sulfurization of solution-processed CaSnO<sub>3</sub> oxide precursors. Structural 
characterization confirms complete anion exchange to produce crystalline CaSnS<sub>3</sub> films 
with vertically aligned rod-like grains. Optical studies show strong visible light absorption 
with direct bandgap of 1.72 eV, ideal for photovoltaics. Electrical measurements indicate 
p-type conductivity with hole concentration of 1.2×10<sup>17</sup>
 cm<sup>-3</sup>
 and mobility around 8 
cm2V-1s-1 at room temperature. First-principles DFT calculations corroborate the p-type 
electronic structure. Prototype CaSnS3 solar cells are fabricated with TiO<sub>2</sub> electrode, 
demonstrating power conversion efficiency of 2.5% under AM1.5G, open-circuit voltage 
of 0.55 V, short circuit current density of 11.5 mA/cm<sup>2</sup>
 and fill factor of 0.62. The cells 
also exhibit remarkable ambient shelf stability over 6 months. The comprehensive results 
validate the photovoltaic potential of these earth abundant, sustainable chalcogenide 
perovskites synthesized via scalable low-cost solution methods. Further interface 
engineering can enable enhanced efficiencies.},
DOI = {10.15251/CL.2024.217.543}
}