@Article{CL.2024.217.557,
AUTHOR = {Y. Qachaou, O. Daoudi, I. Jellal, A. Fahmi, M. Lharch, A. Qachaou, A. Raidou, M. Fahoume},
TITLE = {Impact of different rinsing temperatures on SnS thin films created using the SILAR technique},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {7},
PAGES = {557--565},
URL = {http://www.techscience.com/CL/v21n7/64952},
ISSN = {1584-8663},
ABSTRACT = {The (SnS) thin films were prepared by Successive Ionic Layer Adsorption and Reaction 
(SILAR), a versatile and simple method. The cationic and anionic solutions SnCl<sub>2</sub>.2H<sub>2</sub>O and 
Na<sub>2</sub>S.9H<sub>2</sub>O respectively were used as precursor materials, which will be deposited on glass 
substrates to study the effect of rinsing temperature on the properties of our thin films. The 
structural, morphological, and optical properties were investigated by using X-ray 
diffraction, Energy Dispersive X-ray analysis (EDX), Scanning Electron Microscopy 
(SEM) and spectrophotometer. X-ray Diffraction (XRD) patterns indicated that the 
deposited SnS thin films have an orthorhombic crystal structure. Uniform deposition of the 
material over the entire glass substrate was shown by Scanning Electron Microscopy (SEM). 
The optical band gap energy ranged from 1.5 to 1.82eV for direct transitions and from 0.6 
to 0.95eV for indirect transitions. },
DOI = {10.15251/CL.2024.217.557}
}