TY  - EJOU
AU  - Turmanova, K. 
AU  - Prikhodko, O. 
AU  - Tolepov, Zh. 
AU  - Maksimova, S. 
AU  - Manabaev, N. 
AU  - Almas, N. 

TI  - Effects of thermal and laser annealing on the structure of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films
T2  - Chalcogenide Letters

PY  - 2024
VL  - 21
IS  - 7
SN  - 1584-8663

AB  - In this study, we used Raman spectroscopy to compare the local structure of Ge2Sb2Te5 
(GST) thin films with thicknesses of 90 nm and 271 nm that were crystallized through 
thermal annealing and laser radiation (laser annealing) during the recording of Raman 
spectra in situ. We found that for all crystallized films, the position of the main peaks in 
the Raman spectra was almost the same, and their structure corresponded to a hexagonal 
close packed state. It is noteworthy that the full width at half maximum (FWHM) of the 
main peaks varies considerably depending on the crystallization method used. 
KW  - Amorphous semiconductor
KW  -  Sputtering
KW  -  GST
KW  -  Raman spectroscopy
KW  -  FWHM

DO  - 10.15251/CL.2024.217.575