@Article{CL.2024.218.651,
AUTHOR = {A. Skender, A. Aissat, J. P. Vilcot},
TITLE = {Improvement and optimization of Cu<sub>2</sub>ZnSn(S<sub>1-x</sub>Se<sub>x</sub>)<sub>4</sub> structure for optoelectronic applications},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {8},
PAGES = {651--663},
URL = {http://www.techscience.com/CL/v21n8/64944},
ISSN = {1584-8663},
ABSTRACT = {The use of semiconductors based on abundant and less expensive materials in photovoltaic 
industry has grown since electricity consumption has increased, alloys such as 
Cu<sub>2</sub>ZnSn(S<sub>1-x</sub>Se<sub>x</sub>)<sub>4</sub> have recently attracted attention, due to its structural, optical and 
electronic properties which make it a very promising candidate as an absorber layer in 
photovoltaic applications. The lattice mismatch of Cu<sub>2</sub>ZnSn(S<sub>1-x</sub>Se<sub>x</sub>)<sub>4</sub> with Cu2NiGeS4 as 
substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, 
and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters 
such as refractive index from 5.475 to 3.834 for near-infrared wavelengths, and both 
extinction and absorption coefficients are from 0.478 to 0.211 and from 7.956×10<sup>4</sup> to 
6.912×10<sup>4</sup>
 cm<sup>-1</sup>
, respectively, for almost along the visible spectrum. Additionally, the 
bandgap energy of Cu<sub>2</sub>ZnSn(S<sub>1-x</sub>Se<sub>x</sub>)<sub>4</sub> in kesterite structure increases from 1.267 to 
1.442 eV at room temperature, while the compressive strain of the epitaxial layer reduces 
from 3.93 to 2.39% and from 4.62 to 3.17% on the growth plane and following the 
direction of growth, respectively. },
DOI = {10.15251/CL.2024.218.651}
}