TY  - EJOU
AU  - Mahmood, H. K. 
AU  - Hussein, B. H. 

TI  - Influence of tellurium on physical properties of ZnIn<sub>2</sub>Se<sub>4</sub> thin films solar cell
T2  - Chalcogenide Letters

PY  - 2024
VL  - 21
IS  - 9
SN  - 1584-8663

AB  - ZnIn<sub>2</sub>(Se<sub>1-x</sub>Te<sub>x</sub>)<sub>4</sub> (ZIST) chalcopyrite semiconductor thin films at various contents (x = 0.0, 
0.2, and 0.4) are deposited on glass and p type silicon (111) substrate to produce 
heterojunction solar cell by using the thermal evaporation technique at RT where the 
thickness of 500 nm with a vacuum of 1×10<sup>-5</sup>
 mbar and a deposited rates of 5.1 nm/s. This 
study focuses on how differing x content effect on the factors affecting the solar cell 
characteristics of ZIST thin film and n-ZIST/p-Si heterojunction. X-ray diffraction XRD 
investigation shows that this structure of ZIST film is polycrystalline and tetragonal, with 
(112) preferred orientation at 2θ ≈ 27.01. Moreover, atomic force microscopy AFM is 
studying the external morphology of film, and it is shown that both surface roughness and 
average diameter increase with increasing x content, hence increasing the crystallite size of 
thin films. UV/visible spectrophotometer was analyse the optical features of ZIST films, 
such as absorption coefficient, optical energy, and these films possessed a direct gap that 
decreased with increase of x content until it reached its lowest value of 1.6 eV at x = 0.4. 
Hall measurement displayed that the ZIST thin film is n-nature semiconductors with a 
maximum carrier concentration N<sub>H</sub> = 6.2 × 10<sup>18</sup>
 (1/cm<sup>3</sup>)
 , minimum resistivity 0.047 Ω.cm. 
The illumination current-voltage characteristics revealed that the n-ZIST/p-Si solar cell 
heterojunction at x = 0.4 content has a maximum efficiency of 2.97%. 
KW  - n-ZIST/p-Si heterojunction
KW  -  Thin film
KW  -  Photovoltaic
KW  -  XRD
KW  -  Electrical properties

DO  - 10.15251/CL.2024.219.687