@Article{,
AUTHOR = {Y. B. Kishore Kumar, S. Guru Prasad, A. S. Swapna Smitha, U. Chalapathi, G. Suresh Babu, Y. Jayasree, P. Uday Bhaskar, Si-Hyun Park},
TITLE = {Effect of carrier gas on copper antimony sulfide thin films by spray pyrolytic approach},
JOURNAL = {Chalcogenide Letters},
VOLUME = {21},
YEAR = {2024},
NUMBER = {9},
PAGES = {719--727},
URL = {http://www.techscience.com/CL/v21n9/64935},
ISSN = {1584-8663},
ABSTRACT = {This study explores the ternary compound semiconductor as a potential absorber layer for 
third-generation solar cells. CuSbS<sub>2</sub>, a promising candidate for thin film absorber layers, is 
fabricated using a simple spray pyrolysis method. The research specifically investigates the 
influence of two different carrier gases during the fabrication process. X-ray diffraction as 
well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films 
fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied 
by reduced microstrain and dislocation density. Furthermore, these films exhibit a 
significantly improved absorption coefficient, reaching 10<sup>5</sup>
 cm<sup>-1</sup>
. Optical studies indicate 
that the materials possess a direct band gap of 1.50 eV and exhibit p-type conductivity. 
CuSbS<sub>2</sub> thin film heterojunction solar cell exhibits a maximum efficiency of 0.49%.},
DOI = {}
}