TY  - EJOU
AU  - Kumar, Y. B. Kishore 
AU  - Prasad, S. Guru 
AU  - Smitha, A. S. Swapna 
AU  - Chalapathi, U. 
AU  - Babu, G. Suresh 
AU  - Jayasree, Y. 
AU  - Bhaskar, P. Uday 
AU  - Park, Si-Hyun 

TI  - Effect of carrier gas on copper antimony sulfide thin films by spray pyrolytic approach
T2  - Chalcogenide Letters

PY  - 2024
VL  - 21
IS  - 9
SN  - 1584-8663

AB  - This study explores the ternary compound semiconductor as a potential absorber layer for 
third-generation solar cells. CuSbS<sub>2</sub>, a promising candidate for thin film absorber layers, is 
fabricated using a simple spray pyrolysis method. The research specifically investigates the 
influence of two different carrier gases during the fabrication process. X-ray diffraction as 
well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films 
fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied 
by reduced microstrain and dislocation density. Furthermore, these films exhibit a 
significantly improved absorption coefficient, reaching 10<sup>5</sup>
 cm<sup>-1</sup>
. Optical studies indicate 
that the materials possess a direct band gap of 1.50 eV and exhibit p-type conductivity. 
CuSbS<sub>2</sub> thin film heterojunction solar cell exhibits a maximum efficiency of 0.49%.
KW  - CuSbS<sub>2</sub>
KW  -  Thin films
KW  -  Spray pyrolytic technique
KW  -  Carrier gases
KW  -  Solar cell

DO  -