@Article{CL.2025.221.1,
AUTHOR = {S. N. Garibova, А. I. Isayev, S. A. Rzayeva, F. N. Mammadov},
TITLE = {Raman and x-ray diffraction data analysis of Ge2Sb2Te5 films using gaussian approximation considering the temperature population factor},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {1},
PAGES = {1--9},
URL = {http://www.techscience.com/CL/v22n1/64898},
ISSN = {1584-8663},
ABSTRACT = {The structure particulars of amorphous Ge2Sb2Te5 thermally evaporated on glass
substrates, as well as films annealed at temperatures of 500 and 700 K have been studied
by the considering of experimentally established facts obtained from X-ray analysis and
Raman spectroscopy measurements. The Debye-Scherrer and Williams-Hall methods were
applied to the X-ray diffraction data for estimate the size of crystallites, interatomic
distances, dislocation density and structure distortion degree. The features of heat
treatment effect on numerical values of the above quantities at a given temperatures have
been established. The analysis of the spectral distribution of Raman scattering was
measured at light frequencies between 40 ÷ 300 cm-1
. The rather extended nature of the
identified bands suggests the presence of several vibrational modes, leading to the
appearance of individual spectral bands. To determine the vibrational modes, a reduced
intensity was constructed from the experimental Raman spectrum data and the Gaussian
approximation was applied to the latter. Having a mind the results of published works, the
vibration modes existing in the samples obtained immediately after the process of layer
application were determined, as well as the chemical nature and structure elements
corresponding to these modes forming the amorphous matrix. The vibration modes in
crystallized layers after heat treatment at the given temperatures were determined, as well
as the chemical bonds and structural units forming their local structure. },
DOI = {10.15251/CL.2025.221.1}
}