@Article{CL.2025.2210.855,
AUTHOR = {R. U. Siddikov, Kh. M. Sulaymonov, N. Kh. Yuldashev},
TITLE = {Tensoelectric properties of (BixSb<sub>1-x</sub>)<sub>2</sub>Te<sub>3</sub> films under the influence of a microwave field},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {10},
PAGES = {855--862},
URL = {http://www.techscience.com/CL/v22n10/64822},
ISSN = {1584-8663},
ABSTRACT = {This paper presents the results of an experimental study of the tens metric and dielectric 
properties of polycrystalline (BixSb<sub>1-x</sub>)<sub>2</sub>Te<sub>3</sub> films in the temperature range of 280−480 K 
and at microwave frequencies. The temperature dependences of the specific conductivity, 
impedance, and permittivity under the action of uniaxial static deformation are analyzed. 
The deformation phenomena detected in polycrystalline films under the action of a 
microwave field are qualitatively interpreted based on the effective medium theory.},
DOI = {10.15251/CL.2025.2210.855}
}