@Article{CL.2025.2211.939,
AUTHOR = {Fan He, Xu He, Jie Wang, Yu Hu},
TITLE = {Emitter/Absorber Interface Design Strategies for Se Solar Cells},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {11},
PAGES = {939--949},
URL = {http://www.techscience.com/CL/v22n11/64815},
ISSN = {1584-8663},
ABSTRACT = {Selenium (Se) has garnered significant attention as a promising wide-bandgap material for photovoltaic
 applications. However, progress in enhancing the efficiency of Se solar cells remains limited. This study addresses
 this challenge by targeting the critical emitter/Se absorber interface for performance improvement. Through 
numerical simulations, we systematically investigate the impact of key interface properties—specifically, band 
alignment and defect characteristics—on device performance. Our results demonstrate that a slight positive conduction
 band offset (CBO) effectively strengthens absorber band bending and reduces hole concentration at the Se surface.
Furthermore, minimizing interface defect density or incorporating donor-type defects significantly alleviates 
interfacial recombination. Building on these findings, we propose a novel interface passivation strategy employing 
an ultra-thin dielectric layer engineered with positive fixed charges or hydrogen atoms. This approach is anticipated 
to substantially suppress recombination losses and enhance the performance of Se solar cells, facilitating their 
broader adoption in photovoltaics. },
DOI = {10.15251/CL.2025.2211.939}
}