@Article{CL.2025.2211.951,
AUTHOR = {Akramjon Y. Boboev, Ulugbek R. Karimberdiev, Sardor R. Kadirov, Nuritdin Y. Yunusaliyev},
TITLE = {Growth of Solid Solutions (Ge2)1−x−y(GaAs1−δBiδ)x(ZnSe)y on Silicon Substrates by Liquid Phase Epitaxy},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {11},
PAGES = {951--957},
URL = {http://www.techscience.com/CL/v22n11/64816},
ISSN = {1584-8663},
ABSTRACT = {This paper investigates the possibility of growing solid solutions of the composition
(Ge2)1−x−y(GaAs1−δBiδ)x(ZnSe)y on silicon substrates using a germanium (Ge) buffer layer. The optimal conditions for
obtaining a structurally high-quality epitaxial layer have been determined. In the study, the solid solution was obtained
by liquid-phase epitaxy from a bismuth-containing melt solution. Epitaxial growth was carried out in a palladiumpurified
hydrogen atmosphere at a cooling rate of 1 ÷ 1.5°C/min in the temperature range 750 ÷ 650°C. Experimental
data showed that the growth of the epitaxial film significantly depends on the size of the gap between the substrate
and the starting material: the average symmetrical gap was 0.8 mm with a dispersion of 0.1 mm. Crystallisation occurred
under the combined influence of diffusion and gravitational flow processes. Epitaxial films with a thickness of
up to 10 µm demonstrated p-type conductivity with a specific resistance of about 10 Ω∙cm and a carrier concentration
of 1.5 × 1016
cm−3
. At a temperature of 750°C, the formation of nanoclusters was observed, which is associated with
a 4% mismatch in lattice parameters and a difference in the thermal expansion coefficients of the components. The
solid solution (Ge2)1−x−y(GaAs1−δBiδ)x(ZnSe)y (at 0 ≤ x ≤ 0.53, 0 ≤ y ≤ 0.74) was characterised by a gradient composition.
At a depth of 1 μm, the GaAs and ZnSe content did not exceed 15% and 12%, respectively.},
DOI = {10.15251/CL.2025.2211.951}
}