@Article{CL.2025.2212.1019,
AUTHOR = {Naeemah A. Aswad, Ayed N. Saleh},
TITLE = {Investigation of the Influence of Variations in Thickness and Concentration on the Optoelectronic Characteristics of p-CuI/n-InSe Photodetector},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {12},
PAGES = {1019--1029},
URL = {http://www.techscience.com/CL/v22n12/65643},
ISSN = {1584-8663},
ABSTRACT = {The SCAPS-1D software was used to simulate a p–CuI/n–InSe photodetector at 300 K with AM1.5G light. The simulation results showed that, with a quantum efficiency of 97.6% at 800 nm and a responsivity of 0.67 A/W, the ideal absorber layer thickness of 0.8 µm produced the highest overall performance. The specific detectivity was enhanced to 2.5 × 10<sup>15</sup> cm·Hz<sup>1/2</sup>
·W<sup>−3</sup>
 and the dark current was decreased by increasing the InSe carrier concentration
from 1 × 10<sup>15</sup> cm<sup>−3</sup>
 to 3 × 10<sup>15</sup> cm<sup>−3</sup>
. These findings show that the CuI/InSe heterojunction’s broadband response,
strong responsivity, and low dark current make it a viable option for near-infrared photodetection applications. },
DOI = {10.15251/CL.2025.2212.1019}
}