@Article{CL.2025.222.97,
AUTHOR = {A. Ledesma-Juárez, J. F. Quintero-Guerrero, A. M. Fernández},
TITLE = {Fabrication and characterization of Cu (In, Ga) Se<sub>2</sub> thin films by electrodeposition: optimization of the thermal treatment with selenium  and mechanical disturbance technique},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {2},
PAGES = {97--108},
URL = {http://www.techscience.com/CL/v22n2/64867},
ISSN = {1584-8663},
ABSTRACT = {The evaporation technique fabricates solar cells using the Cu(In, Ga)Se<sub>2</sub> (CIGS) absorber. 
This technique has strong limitations in preparing this absorber in a large area, necessitating 
the electrodeposition technique. However, the morphology and crystallinity of this absorber 
need to be sufficiently adequate to guarantee proper collection of charge carriers since a 
cauliflower-type growth is favored. This underscores the need for modifications during the 
synthesis, thermal treatments, and post-synthesis to improve the morphology and 
crystallinity, a complex and significant aspect of our research. This work discusses the 
structural, atomic composition, morphological, and optical results obtained for samples of 
CIGS films synthesized by the electrodeposition technique. We proudly report that we 
achieved the best atomic composition, close to the ideal and an adequate morphology, by 
selenizing the samples with 30 mg and a temperature of 570°C. This success was further 
enhanced by subjecting these films to constant periodic movement during their synthesis, 
leading to significant improvements in the crystallinity, a testament to the success of our 
research.},
DOI = {10.15251/CL.2025.222.97}
}