TY  - EJOU
AU  - Giyasova, F. A. 
AU  - Yuldoshev, M. A. 

TI  - Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon
T2  - Chalcogenide Letters

PY  - 2025
VL  - 22
IS  - 2
SN  - 1584-8663

AB  - The paper briefly describes the methodology for studying the temporal characteristics of 
near-IR photodiode structures under the influence of pulsed radiation from a 
semiconductor laser with a wavelength of 1100 and 1320 nm. The results of studying the 
response time of multilayer photosensitive Au-nCdS-nSi-pCdTe-Au and Au-nInP-nCdSνGaAs:O-Au
 structures with potential barriers are presented. It has been experimentally 
shown that the structures under study are not inferior in response time to known analogs 
based on gallium arsenide and silicon heterostructures, and can also be used in a wide 
optical range.
KW  - Rise time
KW  -  Fall time
KW  -  Reverse current
KW  -  Response speed
KW  -  Photodiode
KW  -  Structure
KW  -  Photocurrent
KW  -  Light pulse

DO  - 10.15251/CL.2025.222.123