@Article{CL.2025.222.151,
AUTHOR = {F. Saker, L. Remache, D. Belfennache, K. R. Chebouki, R. Yekhlef},
TITLE = {Effect of porosity of mesoporous silicon substrates on CdS thin films deposited by chemical bath deposition},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {2},
PAGES = {151--166},
URL = {http://www.techscience.com/CL/v22n2/64872},
ISSN = {1584-8663},
ABSTRACT = {In this work the chemical bath deposition (CBD) method was used to synthesize Cadmium 
sulphide (CdS) thin films on glass, silicon (Si), and porous silicon (PSi) substrates. The 
PSi substrates were prepared by an electrochemical etching method using different current 
densities at constant etching time of 5 minutes. The CdS thin films were characterized 
using the X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force 
microscopy (AFM), optical transmittance spectroscopy in the Uv visible range, and 
electrical characterization (I–V characteristics). The obtained results demonstrated that 
the morphology of the deposited materials was influenced by the porosity of the PSi 
substrates. The average crystallite dimensions for CdS/glass and CdS/Si were determined 
to be 46.12 nm and 23.08 nm, respectively. In CdS/PSi structures, the average value of the 
grain size decreases with increasing porosity. The smallest one is obtained for the CdS/PSi 
structure with 70% porosity, amounting to 11.55 nm and the smallest value is also for the 
mean the RMS (Root-Mean-Square) value 18.83 nm. The measured current-voltage 
characteristics in coplanar structure on the CdS/PSi/Si sample showed that the 
photocurrent of the CdS/Si structure is of 3.17 µA and increases up to 600 µA for the 
CdS/PSi/60% structure. },
DOI = {10.15251/CL.2025.222.151}
}