@Article{CL.2025.223.239,
AUTHOR = {S. I. Aziz, G. G. Ali},
TITLE = {Enhancement of performance Cd<sub>x</sub>Pb<sub>1-x</sub>S / porous silicon heterojunction photodetector by chemical spray pyrolysis method},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {3},
PAGES = {239--253},
URL = {http://www.techscience.com/CL/v22n3/64903},
ISSN = {1584-8663},
ABSTRACT = {This work investigates the photodetector characteristics of lead and cadmium sulfide thin 
films deposited on porous silicon heterojunction at composites (x=0,0.25,0.5,0.75,1). The 
characteristics of all deposited samples were estimated by X-ray diffraction (XRD), highresolution
 scanning electron microscope (FESEM), Energy-dispersive X-ray (EDX), I-V 
measurements, and photodetector properties. PbS and CdS thin films have been successful, 
and photodetector properties on the porous silicon surface have performed well using the 
chemical spray method. An X-ray confirmed that the prepared samples have a crystalline 
phase structure. Besides, the results indicate that the PbS and CdS thin films have cubic 
and hexagonal structures respectively. In detail, the crystalline size decreases with 
increasing concentration. FESEM images show that the porous silicon has a sponge-like 
structure and is uniformly distributed at the surface. Furthermore, I-V curves of the 
prepared thin films have rectifying behavior. The performance of Cd<sub>x</sub>Pb<sub>1-x</sub>S/ Porous 
silicon as a photodetector shows that the maximum values of quantum efficiency were 
found to be 10%, 14%, 16%, 23%, and 44% at x=0,0.25,0.5, 0.75and 1 respectively. The 
variation of photocurrent with time (time rise and time fall) has good electrical stability 
and fast response under light cycling. The photodetector performance of Cd<sub>x</sub>Pb<sub>1-x</sub>S/ 
Porous silicon heterojunction is in a positive linear relationship with the used 
concentration. },
DOI = {10.15251/CL.2025.223.239}
}