@Article{CL.2025.224.331,
AUTHOR = {O. Mekhbi, K. Kamli, Z. Hadef, O. Kamli, M. Bouatrous, N. Houaidji, L. Zighed},
TITLE = {Enhanced performance of tin sulfide thin-film solar cells via silicon substrate integration: a combined experimental and simulation study},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {4},
PAGES = {331--339},
URL = {http://www.techscience.com/CL/v22n4/64865},
ISSN = {1584-8663},
ABSTRACT = {This work presents a hybrid study that employs Ultrasonic Spray method for the deposition of SnS absorber films and SCAPS-1D simulation method for the analysis of various solar cell topologies. Different deposition times have been employed to optimize structural, optics, and electrical properties. To evaluate their potential as absorber layers for solar cells, the films were analyzed by using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and tested for electrical performance. Complementary numerical simulations were carried out with SCAPS-1D in modeling ZnO:Al/i-ZnO/SnS<sub>2</sub>/SnS solar cell structures. Results showed that optimized SnS thickness of 2.5 µm and high carrier density improve the performance of the devices and with a maximum of 6.37% PCE when integrated with silicon substrates. },
DOI = {10.15251/CL.2025.224.331}
}