@Article{CL.2025.224.441,
AUTHOR = {A. Z. Mahmoud, L. G. Amin, S. A. Mahmoud, M. M. Bashier, M. E. M. Eisac, N. Dhahri, A. Mohamed, A. A. Al-Dumiri, S. E. I. Yagoub, M. A. Abdel-Rahim},
TITLE = {Electrical properties of Bi<sub>x</sub>Se<sub>100-x</sub> chalcogenide glass},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {4},
PAGES = {441--450},
URL = {http://www.techscience.com/CL/v22n4/64866},
ISSN = {1584-8663},
ABSTRACT = {The electrical and structural characteristics of Bi<sub>x</sub>Se<sub>100-x</sub> glasses (where x=5, 10, 15, and 25 at. %) were systematically investigated. Using the traditional Quenching of melts process, the amorphous Bi<sub>x</sub>Se<sub>100-x</sub> materials were created. Thin films of Bi<sub>x</sub>Se<sub>100-x</sub> have formed onto ultrasonically glass substrates that have been cleaned using thermal evaporation in a vacuum of approximately 10<sup>-5</sup> Torr. Here we show and discuss the results of four bulk glasses of Bi<sub>x</sub>Se<sub>100-x</sub> (where x=5, 10, 15, and 25 at. %) that were subjected to differential thermal analysis (DTA) under non-isothermal conditions. For the compositions under consideration, five separate methods were used to calculate the activations of the change from amorphous to crystalline. The crystalline phases obtained from differential thermal analysis (DTA), additionally, scanning electron microscopy (SEM) have been characterized utilizing x-ray diffraction. The glass forming factors kg are derived for the analyzed compositions. The relationship between electrical conductivity (σ) and composition, as well as annealing temperature (T) within the range of 300–400 K, has been examined for Bi<sub>x</sub>Se<sub>100-x</sub> (x=5, 10, 15, and 25 at. %) amorphous thin films. The electrical measurements acquired are ultimately analyzed in relation to the amorphous–crystalline change.},
DOI = {10.15251/CL.2025.224.441}
}