@Article{CL.2025.226.521,
AUTHOR = {D. M. A. Latiff, B. A. Ahmed, S. M. Ali, K. A. Jasim},
TITLE = {Fabrication and characterization of Se<sub>66</sub>S<sub>44-x</sub>As<sub>x</sub> thin films chalcogenide},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {6},
PAGES = {521--528},
URL = {http://www.techscience.com/CL/v22n6/64853},
ISSN = {1584-8663},
ABSTRACT = {In this paper, the effect of sulfur substitution by arsenic on the structural, optical properties 
of thin films of the trivalent chalcogenide Se<sub>66</sub>S<sub>44-x</sub>As<sub>x</sub> at different concentrations (where x 
= 0, 8, 16, and 24 at %) was studied. Thin films with a thickness of (300±10 nm) were 
prepared using thermal evaporation of bulk samples. Structural examinations were 
performed using XRD and AFM techniques. All the studied film samples were amorphous 
in structure and the intensity of the crystalline parts was high in the range of 10-40. Also, in 
Atomic Force Microscopy (AFM). It was found that increasing the concentration of arsenic 
affects the structural parameters such as surface roughness, particle density, and average 
grain size. As the arsenic element increased by 0.24, the grains became more regular, and 
the particle density increased. UV-Vis measurements reveal that the prepared films' 
absorption in the spectral wavelength range from 200 to 1100 nm. It was found that 
increasing the arsenic content led to a change in the absorbance of the films. The optical 
energy gap of Se<sub>66</sub>S<sub>44-x</sub>As<sub>x</sub> thin films was determined and it was found that increasing arsenic 
content affected the energy gap differently as it changed within the range (2.35-2.19 eV). 
The energy gap increased at concentrations of (8, 16%) while the energy gap decreased at 
concentrations of 24%. },
DOI = {10.15251/CL.2025.226.521}
}